- 您现在的位置：买卖IC网 > Sheet目录488 > NTGS3130NT1G (ON Semiconductor)MOSFET N-CH SGL 20V 5.6A 6-TSOP
NTGS3130N
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V; I D = 250 m A
20
9.8
V
mV/ ° C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
I DSS
I GSS
V GS = 0 V; V DS = 16 V,
T J = 25 ° C
V DS = 0, V GS = ± 8 V
1.0
100
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS, I D = 250 m A
0.4
0.6
1.4
V
Negative Temperature Coefficient
V GS(TH) /T J
3.4
mV/ ° C
Drain-to-Source On-Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 4.5 V, I D = 5.6 A
V GS = 2.5 V, I D = 4.9 A
V DS = 10 V, I D = 5.6 A
19
25
8.2
24
32
m W
S
CHARGES, CAPACITANCE, & GATE RESISTANCE
Input Capacitance
Output Capacitance
C ISS
C OSS
V GS = 0 V,
f = 1 MHz,
935
169
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
C RSS
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
V DS = 16 V
V GS = 0 V,
f = 1 MHz,
V DS = 10 V
V GS = 4.5 V
V DS = 16 V
I D = 5.6 A
104
965
198
110
13.2
0.60
1.5
20.3
pF
Gate-to-Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V
V DS = 5.0 V
I D = 6.2 A
4.2
11.8
0.6
1.4
2.7
18.0
nC
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn-On Delay Time
t d(ON)
6.3
12.6
Rise Time
Turn-Of f Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V,
V DD = 16 V,
I D = 1 A,
R G = 3 W
7.3
21.7
9.7
13.5
35.1
17.6
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 1.0 A
T J = 25 ° C
0.7
1.2
V
Reverse Recovery Time
t RR
20.4
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 Vdc,
dI SD /dt = 100 A/ m s,
I S = 1.0 A
8.1
11.6
8.8
ns
nC
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTGS3441BT1G
MOSFET P-CH 20V 2.2A 6-TSOP
NTGS3441PT1G
MOSFET P-CH 20V 1.8A 6-TSOP
NTGS3441T1
MOSFET P-CH 20V 1.65A 6-TSOP
NTGS3443BT1G
MOSFET P-CH 20V 2.7A 6-TSOP
NTGS3443T1
MOSFET P-CH 20V 2.2A 6-TSOP
NTGS3446T1
MOSFET N-CH 20V 2.5A 6-TSOP
NTGS3447PT1G
MOSFET P-CH 12V 3.4A 6-TSOP
NTGS3455T1
MOSFET P-CH 30V 2.5A 6-TSOP
相关代理商/技术参数
NTGS3136P
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6
NTGS3136PT1G
功能描述:MOSFET PFET TSOP6 20V/8V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3433T1
功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3433T1/D
制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.3 Amps， -12 Volts
NTGS3433T1_06
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MOSFET -3.3 Amps, -12 Volts
NTGS3433T1G
功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTGS3441B
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.5 A, Single P-Channel, TSOP-6
NTGS3441BT1G
功能描述:MOSFET -20V -3.5A SGL P-CHN TSOP-6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube